DocumentCode :
1149901
Title :
Novel fabrication-tolerant twin-guide laser structure with an external passive waveguide
Author :
Muller, Rudolf ; Bohm, G. ; Trankle, Gunther ; Weimann, G.
Volume :
30
Issue :
15
fYear :
1994
fDate :
7/21/1994 12:00:00 AM
Firstpage :
1232
Lastpage :
1233
Abstract :
The authors propose a novel quasi-symmetrical twin-guide GaAs/AlGaAs laser structure (QSTGL) with a low-loss external passive waveguide. The device is tolerant to fabrication misalignment and therefore well suited for monolithic integration. Threshold current densities of less than 1.1 kA/cm2 and a coupling efficiency between 70 and 80% into the low-loss passive waveguide are achieved
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optoelectronics; optical couplers; optical waveguides; semiconductor lasers; 70 to 80 percent; GaAs-AlGaAs; coupling efficiency; external passive waveguide; fabrication-tolerant twin-guide laser structure; monolithic integration; quasi-symmetrical twin-guide GaAs/AlGaAs laser; threshold current densities;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19940812
Filename :
311882
Link To Document :
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