Title :
Gain-current relation for GaAs lasers with n-type and undoped active layers
Author_Institution :
IBM Thomas J. Watson Research Laboratory, Yorktown Heights, NY, USA
fDate :
2/1/1973 12:00:00 AM
Abstract :
Results for the optical gain coefficient as a function of the nominal current density are given for GaAs lasers with compensated n-type active layers and with undoped active layers. The results suggest that n-type layers may give lower threshold currents near room temperature than do comparable p-type layers.
Keywords :
Charge carrier processes; Current density; Effective mass; Gallium arsenide; Impurities; Optical computing; Radiative recombination; Spontaneous emission; Temperature; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1973.1077478
