Title :
Extended trench-gate power UMOSFET structure with ultralow specific on-resistance
Author :
Venkatraman, Prasad ; Baliga, B. Jayant
fDate :
4/23/1992 12:00:00 AM
Abstract :
An ultralow specific on-resistance power UMOSFET structure with the trench-gate extending down to the N+ substrate is presented. Specific on-resistances in the range 100-200 mu Omega cm2 have been experimentally demonstrated for devices capable of supporting up to 25 V. Comparison of theoretical and experimental results is provided.
Keywords :
insulated gate field effect transistors; power transistors; 25 V; N + substrate; UMOSFET structure; experimental results; on-resistances; power MOSFET; trench gate extension; ultralow specific on-resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920546
