• DocumentCode
    1150026
  • Title

    Improved responsivity and sensitivity characteristics of the thin-film bismuth bolometer

  • Author

    Block, W.H. ; Gaddy, O.L.

  • Author_Institution
    University of Ilinois, Urbana, IL, USA
  • Volume
    9
  • Issue
    2
  • fYear
    1973
  • fDate
    2/1/1973 12:00:00 AM
  • Firstpage
    252
  • Lastpage
    254
  • Abstract
    A new design for the nanosecond response time room-temperature thin-film bismuth bolometer has resulted in much improved responsivity and sensitivity characteristics. A responsivity of 2.20 \\times 10^{-2} V/W and a sensitivity (NEP) of 5.0 \\times 10^{-8} W/Hz1/2is reported. This is an improvement by a factor of 45 for the responsivity and a factor of 70 for the sensitivity over that previously reported for the bismuth-silver bolometer.
  • Keywords
    Bismuth; Bolometers; Delay; Neodymium; Noise level; Silver; Substrates; Temperature sensors; Transistors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1973.1077479
  • Filename
    1077479