DocumentCode
1150165
Title
Linear and nonlinear intersub-band optical absorption in diffusion-induced AlGaAs/GaAs quantum well at far IR wavelengths
Author
Li, E.H. ; Weiss, B.L. ; Laszcz, A.
Author_Institution
Dept. of Electron. & Electr. Eng., Surrey Univ., Guildford, UK
Volume
28
Issue
9
fYear
1992
fDate
4/23/1992 12:00:00 AM
Firstpage
885
Lastpage
886
Abstract
The effect of interdiffusion on the intersub-band absorption coefficient of AlGaAs/GaAs single quantum well structures has been analysed, based on the linear and nonlinear contributions from the first and third order susceptibilities, respectively. The results show that interdiffusion may be used to tune the intersub-band absorption over a large wavelength range of tens of micrometres together with a uniform absorption coefficient.
Keywords
III-V semiconductors; aluminium compounds; chemical interdiffusion; gallium arsenide; infrared detectors; nonlinear optical susceptibility; semiconductor quantum wells; AlGaAs-GaAs; SQW; far IR wavelengths; first order susceptibilities; interdiffusion; intersub-band absorption; linear optical absorption; nonlinear optical absorption; single quantum well structures; third order susceptibilities; uniform absorption coefficient;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920558
Filename
135153
Link To Document