• DocumentCode
    1150229
  • Title

    Microwave performance of GaN MESFETs

  • Author

    Binari, S.C. ; Rowland, L.B. ; Kruppa, W. ; Kelner, G. ; Doverspike, K. ; Gaskill, D. Kurt

  • Author_Institution
    Naval Res. Lab., Washington, DC
  • Volume
    30
  • Issue
    15
  • fYear
    1994
  • fDate
    7/21/1994 12:00:00 AM
  • Firstpage
    1248
  • Lastpage
    1249
  • Abstract
    GaN MESFETs have been fabricated with a 0.25 μm thick channel on a high resistivity GaN layer grown by metal organic vapour phase epitaxy. These devices have a transconductance of 20 mS/mm. For a 0.7 μm gate length device, the measured fT and fmax were 8 and 17 GHz, respectively
  • Keywords
    III-V semiconductors; S-parameters; Schottky gate field effect transistors; equivalent circuits; gallium compounds; semiconductor device models; solid-state microwave devices; vapour phase epitaxial growth; 0.25 micron; 0.7 micron; 20 mS/mm; 8 to 17 GHz; GaN; MESFETs; MOVPE; high resistivity GaN layer; metal organic VPE; microwave performance; submicron gate length device; transconductance; vapour phase epitaxy;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940833
  • Filename
    311917
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1150229