Title :
Low-temperature characteristics of 0.35 μm AlSb/InAs HEMTs
Author :
Kruppa, W. ; Boos, J. Brad
Author_Institution :
Naval Res. Lab., Washington, DC
fDate :
8/4/1994 12:00:00 AM
Abstract :
The effects of low temperature on the characteristics of 0.35 μm gate-length AlSb/InAs HEMTS are reported. Measurements down to 15 K reveal an increase in transconductance and low-field source-drain conductance. The commonly-observed impact ionisation and its associated gate current were found to decrease significally at low temperature apparently due to a increase in bandgap
Keywords :
III-V semiconductors; aluminium compounds; cryogenics; energy gap; high electron mobility transistors; impact ionisation; indium compounds; 0.35 micron; 15 K; AlSb-InAs; HEMTs; bandgap; gate current; impact ionisation; low-field source-drain conductance; low-temperature characteristics; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940908
