DocumentCode
1150273
Title
First hydride free GaInP/GaAs carbon doped HBT grown by CBE using DMAAs and TBP
Author
Benchimol, J.L. ; Driad, Rachid ; Launay, P.
Volume
30
Issue
16
fYear
1994
fDate
8/4/1994 12:00:00 AM
Firstpage
1356
Lastpage
1358
Abstract
A current gain of 120, for a base sheet resistance of 400 Ω/□, is reported in a carbon doped base heterojunction bipolar transistor grown by chemical beam epitaxy (CBE) without hydride sources. This result is to the authors´ knowledge, the best obtained with hydride free CBE for this device
Keywords
III-V semiconductors; carbon; chemical beam epitaxial growth; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor growth; DMAAs; GaInP-GaAs:C; TBP; base sheet resistance; carbon doped HBT; chemical beam epitaxy; current gain; heterojunction bipolar transistor; hydride free CBE;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940844
Filename
311939
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