Title :
Two-colour quantum well infra-red photodetector with peak sensitivities at 3.9 and 8.1 μm
Author :
Tsai, K.L. ; Lee, Charlotte P. ; Tsang, J.S. ; Chen, H.R.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu
fDate :
8/4/1994 12:00:00 AM
Abstract :
A two-colour infra-red photodetector using multistacks of GaAs/AlGaAs quantum wells is demonstrated. The response peaks are at 3.9 and 8.1 μm. The peak responsivities of the detector are 0.4 A/W and 35 A/W for 8.1 μm and 3.9 μm bands, respectively. The detectivities of the 3.9 and 8.1 μm bands are 7.5×109 and 1.5×1010 cmHz1/2/W. These values are the best reported results for two-colour detectors with peak sensitivities in the spectral regions of 3-5 and 8-12 μm
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; infrared detectors; semiconductor quantum wells; 3.9 micron; 8.1 micron; GaAs-AlGaAs; GaAs/AlGaAs quantum wells; multistacks; peak responsivities; peak sensitivities; spectral regions; two-colour infra-red photodetector;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940866