Title :
High-speed InGaAs on Si metal-semiconductor-metal photodetectors
Author :
Droge, E. ; Bottcher, E.H. ; Grundmann, Marius ; Krost, A. ; Bimberg, Dieter
Author_Institution :
Inst. fur Festkorperphys. I, Tech. Univ. Berlin
fDate :
8/4/1994 12:00:00 AM
Abstract :
High-speed long-wavelength metal-semiconductor-metal (MSM) photodetectors were fabricated on the Fe-doped InP/GaAs material system on Si. The detector layers were grown by MOCVD on exactly oriented Si(001) patterned with submicrometre pitch V-grooves. The devices show a fast impulse response (44 ps FWHM, 83 ps fall time) and a large bandwidth of 3.4 GHz for illumination with 1.31 μm light pulses at 5 V bias
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; iron; metal-semiconductor-metal structures; optical receivers; photodetectors; semiconductor epitaxial layers; semiconductor growth; silicon; vapour phase epitaxial growth; 1.3 micron; 3.4 GHz; 44 ps; 5 V; 83 ps; InP:Fe-GaAs-Si; InP:Fe/GaAs/Si; MOCVD; Si; bandwidth; fast impulse response; light pulses; metal-semiconductor-metal photodetectors; submicrometre pitch V-grooves;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940919
