Possibility of X-ray detection using quantum wells

Author

Basu, Santanu

Author_Institution

Res. Lab. of Electron., MIT, Cambridge, MA, USA

Volume

27

Issue

9

fYear

1991

fDate

9/1/1991 12:00:00 AM

Firstpage

2116

Lastpage

2121

Abstract

The author presents simple designs of quantum-well-based detectors which can be easily fabricated and which can detect a flux of X-rays incident on the detector. The author calculates the X-ray induced change in absorption and refractive index in GaAs-based quantum wells and uses that information to predict the performance of several proposed X-ray detectors based on carrier induced change in optical susceptibility in semiconductor quantum well structures following X-ray absorption. A 1% change in the probe beam in a reflection geometry is calculated for an incident flux of 12 X-ray photons per μm²

Keywords

III-V semiconductors; X-ray detection and measurement; gallium arsenide; semiconductor counters; semiconductor quantum wells; GaAs; III-V semiconductor; X-ray absorption; X-ray detection; carrier induced change; incident flux; optical susceptibility; probe beam; quantum-well-based detectors; reflection geometry; refractive index; semiconductor quantum well structures; Electromagnetic wave absorption; Geometrical optics; Optical reflection; Optical refraction; Optical variables control; Probes; Quantum wells; Refractive index; X-ray detection; X-ray detectors;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.135169

Filename

135169