A new DC model of HBT´s including self-heating effect suitable for circuit simulators

Author

Dupuis, John ; Hajji, Rached ; Ghannouchi, Fadhel M. ; Saab, Khaled ; Lavallee, Sylvain

Author_Institution

Dept. of Electr. & Comput. Eng., Ecole Polytech. de Montreal, Que., Canada

Volume

42

Issue

12

fYear

1995

fDate

12/1/1995 12:00:00 AM

Firstpage

2036

Lastpage

2042

Abstract

This paper presents a new empirical DC model which includes self-heating effects. The expression of the collector current does not explicitly incorporate the junction temperature of the device to aid convergence process and to simplify the equations involved. A comparison of simulated and experimental DC-IV characteristics over the ohmic and active regions demonstrates the accuracy of the model. This model is suitable for optimization purposes and has been implemented in nonlinear circuit simulators, HSPICE and HP-MDS

Keywords

circuit analysis computing; heterojunction bipolar transistors; semiconductor device models; DC model; HBTs; HP-MDS; HSPICE; IV characteristics; collector current; nonlinear circuit simulators; optimization; self-heating effects; Circuit simulation; Convergence; Electromagnetic heating; Heterojunction bipolar transistors; Microwave circuits; Microwave devices; Microwave theory and techniques; Microwave transistors; Nonlinear circuits; Nonlinear equations; Parameter extraction; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.477758

Filename

477758