• DocumentCode
    1150542
  • Title

    Voltage controlled dielectric resonator oscillator using three-terminal MESFET varactor

  • Author

    Lee, Jonathan Y. ; Hong, U.S.

  • Author_Institution
    Dept. of Electr. & Commun. Eng., Kwangwoon Univ., Seoul
  • Volume
    30
  • Issue
    16
  • fYear
    1994
  • fDate
    8/4/1994 12:00:00 AM
  • Firstpage
    1320
  • Lastpage
    1321
  • Abstract
    The MESFET can be used as a three-terminal MESFET varactor by employing gate depletion capacitance Cg. Using this concept, a new VCDRO (voltage controlled dielectric resonator oscillator) has been designed. The VCDRO produced 10.17 dBm output power at a frequency of 11.00 GHz and tuning bandwidth of 70.2 MHz. The advantage of using the MESFET as a three-terminal varactor is to let the MESFET perform both roles at the same time, thus simplifying the circuit configuration and fabrication. This finding demonstrates the potential of using both real and imaginary parts of the equivalent impedance of the active device
  • Keywords
    Schottky gate field effect transistors; dielectric resonators; microwave oscillators; multiterminal networks; solid-state microwave circuits; varactors; variable-frequency oscillators; 11.00 GHz; 70.2 MHz; circuit configuration; dielectric resonator oscillator; equivalent impedance; gate depletion capacitance; output power; three-terminal MESFET varactor; voltage controlled oscillator;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940892
  • Filename
    311963