DocumentCode :
1150542
Title :
Voltage controlled dielectric resonator oscillator using three-terminal MESFET varactor
Author :
Lee, Jonathan Y. ; Hong, U.S.
Author_Institution :
Dept. of Electr. & Commun. Eng., Kwangwoon Univ., Seoul
Volume :
30
Issue :
16
fYear :
1994
fDate :
8/4/1994 12:00:00 AM
Firstpage :
1320
Lastpage :
1321
Abstract :
The MESFET can be used as a three-terminal MESFET varactor by employing gate depletion capacitance Cg. Using this concept, a new VCDRO (voltage controlled dielectric resonator oscillator) has been designed. The VCDRO produced 10.17 dBm output power at a frequency of 11.00 GHz and tuning bandwidth of 70.2 MHz. The advantage of using the MESFET as a three-terminal varactor is to let the MESFET perform both roles at the same time, thus simplifying the circuit configuration and fabrication. This finding demonstrates the potential of using both real and imaginary parts of the equivalent impedance of the active device
Keywords :
Schottky gate field effect transistors; dielectric resonators; microwave oscillators; multiterminal networks; solid-state microwave circuits; varactors; variable-frequency oscillators; 11.00 GHz; 70.2 MHz; circuit configuration; dielectric resonator oscillator; equivalent impedance; gate depletion capacitance; output power; three-terminal MESFET varactor; voltage controlled oscillator;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19940892
Filename :
311963
Link To Document :
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