DocumentCode :
1150635
Title :
Reduced effective differential gain in diode lasers due to confinement factor modulation
Author :
Shin, S. ; Su, C.B. ; LaCourse, J. ; Rideout, W.C.
Author_Institution :
Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA
Volume :
28
Issue :
4
fYear :
1992
fDate :
4/1/1992 12:00:00 AM
Firstpage :
783
Lastpage :
784
Abstract :
A reduced effective differential gain is shown to arise in diode lasers by including the modulation of the confinement factor with carrier density. This effective differential gain, not the material gain, is the parameter determined from conventional measurements of the differential gain. This term is in addition to the static reduction in confinement factor with carrier density, and can significantly reduce the resonance frequency and modulation bandwidth for lasers with short cavities and thin active layers
Keywords :
semiconductor junction lasers; carrier density; confinement factor modulation; diode lasers; modulation bandwidth; reduced effective differential gain; resonance frequency; short cavities; thin active layers; Bandwidth; Carrier confinement; Charge carrier density; Diode lasers; Equations; Frequency modulation; Optical modulation; Resonance; Resonant frequency; Semiconductor lasers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.135194
Filename :
135194
Link To Document :
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