Title :
High power, reliable 645 nm compressively strained GaInP/GaAlInP laser diodes
Author :
Ou, S.S. ; Yang, Jie J. ; Jansen, Maarten ; Hess, Christopher ; Hayashida, P. ; Tu, Chun-Da ; Alvarez, Federico
Author_Institution :
APT, Torrance, CA
fDate :
8/4/1994 12:00:00 AM
Abstract :
CW output powers in excess of 1 W and reliable CW output powers of 250 mW at room temperature from double quantum well compressively strained GaInP/GaAlInP laser diodes with an emission wavelength of 645 nm were demonstrated. An anomalous dependence of threshold current density and wavelength on GaInP/GaAlInP laser diode stripe width was characterised
Keywords :
III-V semiconductors; gallium compounds; indium compounds; semiconductor lasers; semiconductor quantum wells; 250 mW; 645 nm; CW output powers; GaInP-GaAlInP; compressively strained GaInP/GaAlInP laser diodes; double quantum well; emission wavelength; laser diode stripe width; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940904
