DocumentCode
1150750
Title
10 000 h, 30-50 mW CW operation of 670-690 nm visible laser diodes
Author
Shima, Akio ; Watanabe, Hiromi ; Tada, Hishashi ; Arimoto, S. ; Kamizato, T. ; Omura, E. ; Otsubo, M.
Author_Institution
Mitsubishi Electr. Corp., Hyogo
Volume
30
Issue
16
fYear
1994
fDate
8/4/1994 12:00:00 AM
Firstpage
1293
Lastpage
1294
Abstract
The reliability of high-power AlGaInP red laser diodes with strained DQW (double quantum well) active layer and an MQB (multiquantum barrier) has been investigated. For the nonwindow 690 nm lasers and the 670 nm window lasers 10000 h CW operation under the conditions of 60°C, 30 mW and 30°C, 50 mW, respectively, was realised
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; reliability; semiconductor lasers; semiconductor quantum wells; 10000 h; 30 to 50 mW; 30 to 60 degC; 670 to 690 nm; AlGaInP; CW operation; high-power AlGaInP red laser diodes; multiquantum barrier; nonwindow lasers; reliability; strained double quantum well active layer; visible laser diodes; window lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940912
Filename
311981
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