DocumentCode :
1150823
Title :
Electron-beam-semiconductor application to laser pulsing
Author :
Wagner, Herbert M.
Author_Institution :
US Army Electronics Technology and Devices Laboratory, Fort Monmouth, NJ, USA
Volume :
9
Issue :
6
fYear :
1973
fDate :
6/1/1973 12:00:00 AM
Firstpage :
606
Lastpage :
607
Abstract :
A high-current electron-beam-semiconductor pulse amplifier was used to modulate an injection laser. Results show the capability of infrared output having faster rise time and shorter duration than can be obtained with commonly used types of pulse drivers.
Keywords :
Jitter; Laser applications; Laser transitions; Optical pulse shaping; Optical pulses; Power lasers; Pulse amplifiers; Pulse modulation; Pump lasers; Shape;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1973.1077558
Filename :
1077558
Link To Document :
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