Title :
New materials for diode laser pumping of solid-state lasers
Author :
Wang, C.A. ; Groves, S.H.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
fDate :
4/1/1992 12:00:00 AM
Abstract :
The authors review recent progress in the development of new materials for III-V semiconductor diode lasers useful for pumping solid-state lasers. All of the diode lasers discussed are grown on GaAs substrates. Particular emphasis is placed on the performance and reliability of high-CW-power strained-layer InGaAs-AlGaAs diode lasers emitting in the wavelength range between 0.87 and 1.1 μm, improved resistance to degradation of 0.78 to 0.87 μm diode lasers afforded by the strained-layer AlInGaAs-AlGaAs and lattice-matched GaInAsP-GaInP materials systems, and improved performance of visible diode lasers utilizing the materials system GaInP-AlGaInP
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; optical pumping; reviews; semiconductor junction lasers; 0.78 to 0.87 micron; 0.87 to 1.1 micron; GaAs substrates; III-V semiconductor diode lasers; degradation; diode laser pumping; high continuous wave power lasers; lattice matched GaInAsP-GaInP materials systems; materials system GaInP-AlGaInP; performance; reliability; review; solid-state lasers; strained layer AlInGaAs-AlGaAs; strained layer InGaAs-AlGaAs diode lasers; wavelength range; Diode lasers; Gallium arsenide; III-V semiconductor materials; Laser excitation; Optical materials; Pump lasers; Semiconductor diodes; Semiconductor lasers; Solid lasers; Substrates;
Journal_Title :
Quantum Electronics, IEEE Journal of
