Title :
Theoretical and experimental studies of the effects of compressive and tensile strain on the performance of InP-InGaAs multiquantum-well lasers
Author :
Nichols, D. ; Sherwin, M. ; Munns, G. ; Pamulapati, J. ; Loehr, J. ; Singh, J. ; Bhattacharya, P. ; Ludowise, M.
Author_Institution :
Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA
fDate :
5/1/1992 12:00:00 AM
Abstract :
The authors have studied, both theoretically and experimentally, the effects of biaxial strain upon the performance characteristics of broad-area InP-InGaAsP-InxGa1-xAs (0.33⩽x ⩽0.73) separate confinement heterostructure multiquantum-well lasers. The theoretical calculations include the effects of strain on the bandstructure and the Auger recombination rates. A pronounced dependence of the threshold current density Jth upon x is observed. The lowest measured Jth is 589 A/cm2 in an 800-μm laser with x=0.68. Also, internal quantum efficiencies as high as unity and loss coefficients as low as 5.6 cm-1 have been measured for x=0.58
Keywords :
III-V semiconductors; band structure of crystalline semiconductors and insulators; gallium arsenide; indium compounds; piezo-optical effects; semiconductor junction lasers; Auger recombination rates; III-V semiconductors; bandstructure; biaxial strain; broad area InP-InGaAsP-InxGa1-xAs multiquantum well lasers; compressive strain; experimental studies; internal quantum efficiencies; loss coefficients; performance characteristics; separate confinement heterostructure multiquantum-well lasers; tensile strain; theoretical calculations; threshold current density; Capacitive sensors; Charge carrier density; Chemical lasers; Effective mass; Laboratories; Laser theory; Loss measurement; Radiative recombination; Tensile strain; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
