Theoretical and experimental studies of the effects of compressive and tensile strain on the performance of InP-InGaAs multiquantum-well lasers

Author

Nichols, D. ; Sherwin, M. ; Munns, G. ; Pamulapati, J. ; Loehr, J. ; Singh, J. ; Bhattacharya, P. ; Ludowise, M.

Author_Institution

Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA

Volume

28

Issue

5

fYear

1992

fDate

5/1/1992 12:00:00 AM

Firstpage

1239

Lastpage

1242

Abstract

The authors have studied, both theoretically and experimentally, the effects of biaxial strain upon the performance characteristics of broad-area InP-InGaAsP-In_xGa_1-xAs (0.33⩽x ⩽0.73) separate confinement heterostructure multiquantum-well lasers. The theoretical calculations include the effects of strain on the bandstructure and the Auger recombination rates. A pronounced dependence of the threshold current density J_th upon x is observed. The lowest measured J_th is 589 A/cm² in an 800-μm laser with x=0.68. Also, internal quantum efficiencies as high as unity and loss coefficients as low as 5.6 cm^-1 have been measured for x=0.58

Keywords

III-V semiconductors; band structure of crystalline semiconductors and insulators; gallium arsenide; indium compounds; piezo-optical effects; semiconductor junction lasers; Auger recombination rates; III-V semiconductors; bandstructure; biaxial strain; broad area InP-InGaAsP-In_xGa_1-xAs multiquantum well lasers; compressive strain; experimental studies; internal quantum efficiencies; loss coefficients; performance characteristics; separate confinement heterostructure multiquantum-well lasers; tensile strain; theoretical calculations; threshold current density; Capacitive sensors; Charge carrier density; Chemical lasers; Effective mass; Laboratories; Laser theory; Loss measurement; Radiative recombination; Tensile strain; Threshold current;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.135262

Filename

135262