Title :
Comparison of steady-state and transient characteristics of lattice-matched and strained InGaAs-AlGaAs (on GaAs) and InGaAs-AlInAs (on InP) quantum-well lasers
Author :
Lam, Yeeloy ; Loehr, John P. ; Singh, Jasprit
fDate :
5/1/1992 12:00:00 AM
Abstract :
Numerical techniques are developed to study the output spectra and to solve the multimode coupled rate equations including transverse electric (TE) and transverse magnetic (TM) propagations for Inx Ga1-xAs-Al0.3Ga0.7As and In0.53+xGa0.47-xAs-Al0.48In0.52 quantum-well lasers. Optical properties are calculated from a 4×4 k×p band structure, and strain effects are included with the deformation potential theory. It is found that an introduction of 1.4% compressive strain to the quantum well results in roughly 3-4 times improvement in the intrinsic static characteristics in terms of lower threshold current, greater mode suppression and lower nonlasing photon population in the laser cavity. The authors identify the effect of strain on the large signal temporal response. They also include calculated CHSH Auger rates in their model
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; semiconductor junction lasers; Auger rates; GaAs; III-V semiconductors; In0.53+xGa0.47-xAs-Al0.48In 0.52; InxGa1-xAs-Al0.3Ga0.7 As; InGaAs-AlInP quantum well lasers; InP; band structure; compressive strain; deformation potential theory; intrinsic static characteristics; laser cavity; lattice matched lasers; mode suppression; multimode coupled rate equations; nonlasing photon population; numerical techniques; optical properties; output spectra; signal temporal response; strain effects; strained InGaAs-AlGaAs quantum well lasers; threshold current; transient characteristics; transverse electric propagations; transverse magnetic propagations; Capacitive sensors; Equations; Laser modes; Laser theory; Optical coupling; Quantum well lasers; Signal processing; Steady-state; Tellurium; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
