Title :
GaAlAs/GaAs single quantum well gain-coupled distributed feedback laser
Author :
Luo, Y. ; Cao, H.-L. ; Dobashi, M. ; Hosomatsu, H. ; Tada, K. ; Nakano, Y.
Author_Institution :
Opt. Meas. Technol. Dev. Co. Ltd., Tokyo, Japan
Abstract :
A novel gain-coupled distributed feedback laser with a single quantum well (SQW) active layer is proposed and fabricated. The gain perturbation for the gain coupling is due to the periodically perturbed SQW active layer. The characteristics under continuous-wave (CW) operation are presented, included an excellent single-mode property and a very high yield in the single-mode oscillation. A CW threshold current of 31 mA and a high side-mode suppression ratio of 47 dB were achieved. The high single-mode-oscillation yield near 100% indicated the dominance of the gain-coupled optical feedback in the lasers.<>
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; laser modes; semiconductor junction lasers; 31 mA; CW lasing; CW threshold current; DFB lasers; GaAlAs-GaAs; distributed feedback laser; gain perturbation; gain-coupled; gain-coupled optical feedback; high side-mode suppression ratio; periodically perturbed SQW active layer; semiconductors; single quantum well; single-mode oscillation; Diffraction gratings; Distributed feedback devices; Gallium arsenide; Laser feedback; Optical pulse generation; Optical reflection; Optical sensors; Quantum mechanics; Quantum well lasers; Substrates;
Journal_Title :
Photonics Technology Letters, IEEE
