Title :
Improving InAs double heterostructure lasers with better confinement
Author :
Tsou, Y. ; Ichii, A. ; Garmire, Elsa M.
Author_Institution :
Center for Laser Studies, Univ. of Southern California, Los Angeles, CA, USA
fDate :
5/1/1992 12:00:00 AM
Abstract :
The authors have conducted a theoretical study of InAs double heterostructure lasers. Carrier leakage due to drift current is shown to be the main mechanism of the injected carriers in lasers fabricated to date. Reduction of carrier leakage is shown to be possible by using wider bandgap lattice-matched material as the cladding layers. Increased optical confinement is also required to achieve the lowest possible threshold current, which strongly affects the highest lasing temperature achievable. An InAs double heterostructure employing AlAs0.16Sb0.84 as the cladding material is proposed. Simulation on this structure indicates that its threshold current density will be dominated by Auger recombination for most of the temperature range below 300 K, the estimated highest lasing temperature
Keywords :
III-V semiconductors; indium compounds; semiconductor junction lasers; AlAs0.16Sb0.84; Auger recombination; III-V semiconductor; InAs double heterostructure lasers; carrier leakage; cavity loss; cladding layers; drift current; injected carriers; lasing temperature; lattice-matched material; operating temperature range; optical confinement; simulation; theoretical study; threshold current density; Carrier confinement; Chemical industry; Chemical lasers; Laser theory; Optical materials; Photonic band gap; Radiative recombination; Semiconductor lasers; Temperature distribution; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
