Title :
Multifunctional photonic switching operation of 1500 nm Y-coupled cavity laser (YCCL) with 28 nm tuning capability
Author :
Schilling, M. ; Idler, W. ; Baums, D. ; Laube, G. ; Wunstel, K. ; Hildebrand, O.
Author_Institution :
Sel-Alcatel, Stuttgart, Germany
Abstract :
The authors present new results on extended electrical tuning, fast spatial switching, and optically controlled wavelength conversion characteristics for the recently developed InP-based Y-laser structure. The devices have a 80 nm thick bulk InGaAsP active layer and are completely grown by metalorganic vapor phase epitaxy. The facets at both ends of the chip are as-cleaved without antireflective coating. The addressable range for electrically controlled wavelength switching was extended to the record value of 28 nm. When operated as a lossless 1:2 optical space switch, fiber-to-fiber gain >0 dB, extinction ratio >50 dB and high speed operation up to 1 Gb/s were shown. Optically triggered tunable wavelength conversion including dynamic operation was also demonstrated.<>
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser tuning; optical switches; semiconductor junction lasers; semiconductor switches; 1 Gbit/s; 1500 nm; 80 nm; InP; Y-coupled cavity laser; as-cleaved; diode lasers; dynamic operation; electrical tuning; electrically controlled wavelength switching; extinction ratio; fast spatial switching; fiber-to-fiber gain; high speed operation; laser tuning; lossless switches; metalorganic vapor phase epitaxy; optical space switch; optically controlled wavelength conversion; photonic switching; semiconductor switches; thick bulk InGaAsP active layer; tunable wavelength conversion; Coatings; Epitaxial growth; High speed optical techniques; Optical control; Optical fiber losses; Optical fibers; Optical recording; Optical switches; Optical tuning; Optical wavelength conversion;
Journal_Title :
Photonics Technology Letters, IEEE