Differential gain in bulk and quantum well diode lasers

Author

Zmudzinski, C.A. ; Zory, P.S. ; Lim, G.G. ; Miller, L.M. ; Beernink, K.J. ; Cockerill, T.L. ; Coleman, J.J. ; Hong, C.S. ; Figueroa, L.

Author_Institution

Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA

Volume

3

Issue

12

fYear

1991

Firstpage

1057

Lastpage

1060

Abstract

Differential gain (g/sup ´/) of bulk and single-quantum-well (SQW) lasers was determined from threshold current density and differential quantum efficiency measurements. The threshold measurement technique was used to show that g/sup ´/ is a function of cavity length (L) in SQW lasers and independent of L in bulk lasers. It was found that g/sup ´/ of long SQW lasers (1000 mu m) is about 7*10/sup -16/ cm/sup 2/, approximately two times that of bulk lasers. At short cavity lengths (250 mu m), g/sup ´/ is about the same for both laser types.<>

Keywords

laser cavity resonators; semiconductor junction lasers; 1000 micron; 250 micron; AlGaAs-GaAs; SQW; bulk diode lasers; bulk lasers; cavity length; differential quantum efficiency; diode laser differential gain; quantum well diode lasers; semiconductors; single-quantum-well; threshold current density; threshold measurement technique; Chemical lasers; Diode lasers; Electron optics; High speed optical techniques; Optical bistability; Optical losses; Optical switches; Pulsed laser deposition; Quantum well lasers; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.117999

Filename

117999