Wannier-Stark localization in a 1.55 mu m InGaAs/InAlAs superlattice waveguide modulator structure

Author

Bigan, E. ; Harmand, J.C. ; Allovon, M. ; Carré, M. ; Carenco, A. ; Voisin, P.

Author_Institution

CNET, Bagneux, France

Volume

3

Issue

12

fYear

1991

Firstpage

1107

Lastpage

1109

Abstract

The authors present an optical waveguide modulator structure based on Wannier-Stark localization in a InGaAs-InAlAs superlattice. Optical waveguide transmission below the superlattice bandgap displays expected F/sup -1/ oscillatory behavior leading to various modulation schemes. An 11 dB extinction ratio was obtained by applying a 0.7 V drive voltage to a 100 mu m long waveguide device operating at 1.55 mu m under a transverse-electric (TE)-polarization mode. On-state attenuation was 5 dB. Lower open-state attenuation (3 dB) can be obtained simultaneously with a higher extinction ratio (13 dB) but in that case a larger drive voltage (1.6 V) is needed.<>

Keywords

III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; indium compounds; optical modulation; optical waveguides; semiconductor superlattices; 0.7 V; 1.55 micron; 100 micron; 3 dB; 5 dB; InGaAs-InAlAs; TE polarisation; Wannier-Stark localization; drive voltage; extinction ratio; on-state attenuation; open-state attenuation; optical waveguide modulator; oscillatory behavior; semiconductors; superlattice bandgap; superlattice waveguide modulator structure; waveguide transmission; Attenuation; Extinction ratio; Indium compounds; Indium gallium arsenide; Optical attenuators; Optical modulation; Optical superlattices; Optical waveguides; Photonic band gap; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.118017

Filename

118017