High-speed InP/InGaAs avalanche photodiodes with a compositionally graded quaternary layer

Author

Kuwatsuka, H. ; Kito, Y. ; Uchida, T. ; Mikawa, T.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

Volume

3

Issue

12

fYear

1991

Firstpage

1113

Lastpage

1114

Abstract

InP/InGaAs avalanche photodiodes (APDs) with a compositionally graded quaternary layer at the heterointerface between the InGaAs absorption and InP multiplication regions were fabricated and tested. A comparison of samples with the graded layer and with conventional three quaternary layers showed that the frequency characteristics for samples with the graded layer did not deteriorate at a low bias voltage even below -100 degrees C, unlike APDs with three InGaAsP layers. Thus, no hole trapping occurred at the InP/InGaAs heterointerface with the graded layer. A sample with the graded layer showed a cutoff frequency exceeding 9 GHz at a low multiplication factor of 2. The authors found InP/InGaAs APDs with the compositionally graded quaternary layer to be useful over a wide temperature range.<>

Keywords

III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; -100 degC; 9 GHz; APDs; InGaAs absorption regions; InGaAs-InP; InP multiplication regions; avalanche photodiodes; compositionally graded quaternary layer; cutoff frequency; frequency characteristics; heterointerface; high speed APD; low bias voltage; low multiplication factor; photodetectors; semiconductors; wide temperature range; Absorption; Avalanche photodiodes; Frequency; Gold; Indium gallium arsenide; Indium phosphide; Low voltage; Temperature dependence; Temperature distribution; Testing;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.118019

Filename

118019