DocumentCode
1151484
Title
High-speed flip-chip InP/InGaAs avalanche photodiodes with ultralow capacitance and large gain-bandwidth products
Author
Kito, Y. ; Kuwatsuka, H. ; Kumai, T. ; Makiuchi, M. ; Uchida, T. ; Wada, O. ; Mikawa, T.
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
Volume
3
Issue
12
fYear
1991
Firstpage
1115
Lastpage
1116
Abstract
Planar InP/InGaAs avalanche photodiodes (APDs) have been fabricated by adopting a flip-chart configuration and a monolithic lens structure. These APDs exhibit an ultralow capacitance of 70 fF, a quantum efficiency of 80%, a wide bandwidth of 7 GHz, and a large gain-bandwidth product of 80 GHz.<>
Keywords
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; integrated optics; lenses; 7 GHz; 70 fF; InP-InGaAs; avalanche photodiodes; flip-chart configuration; high-speed APDs; large gain-bandwidth products; monolithic lens structure; planar APD; quantum efficiency; semiconductors; ultralow capacitance; wide bandwidth; Absorption; Avalanche photodiodes; Bandwidth; Bonding; Indium gallium arsenide; Indium phosphide; Lenses; Parasitic capacitance; Quantum capacitance; Silicon compounds;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.118025
Filename
118025
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