Propagation characteristics of GaAs/AlGaAs QW ridge waveguides

Author

Chinni, V.R. ; Menyuk, C.R. ; Chen, Y.J.

Author_Institution

Dept. of Electr. Eng., Maryland Univ., Baltimore, MD, USA

Volume

3

Issue

12

fYear

1991

Firstpage

1120

Lastpage

1123

Abstract

A method is presented to accurately determine geometric effects in quantum well (QW) devices. Finite element methods have been used in combination with perturbation techniques to determine the propagation characteristics of a single QW GaAs/AlGaAs ridge waveguide. The attenuation coefficient and phase shift are evaluated for both transverse-electric (TE) and transverse-magnetic (TM) polarizations. The results show that a simple slab model overestimates the attenuation and phase change for wavelengths smaller than the excitonic resonances of the QW and underestimates them for larger wavelengths.<>

Keywords

III-V semiconductors; aluminium compounds; finite element analysis; gallium arsenide; integrated optics; optical waveguide theory; perturbation theory; semiconductor quantum wells; QW ridge waveguides; TE polarisation; TM polarisation; attenuation coefficient; excitonic resonances; finite element methods; geometric effects; perturbation techniques; phase shift; propagation characteristics; quantum well; semiconductors; simple slab model; single quantum well GaAs-AlGaAs; Finite difference methods; Finite element methods; Gallium arsenide; Geometry; Magnetic fields; Optical attenuators; Optical propagation; Optical waveguides; Propagation constant; Waveguide transitions;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.118027

Filename

118027