0-1 GHz waveguide 10.6 μm GaAs electrooptic modulator

Author

Brown, Robert T.

Author_Institution

United Technol. Res. Center, East Hartford, CT, USA

Volume

28

Issue

5

fYear

1992

fDate

5/1/1992 12:00:00 AM

Firstpage

1349

Lastpage

1352

Abstract

A GaAs electrooptic modulator for use in 10.6-μm laser frequency shifting applications is described. High-beam-quality output signals with a frequency tunability of 0.1-1.0 GHz were demonstrated. Thick epitaxial GaAs-AlGaAs waveguide structures were successfully fabricated into single-mode channel waveguides with excellent optical and electrooptic properties. A lumped-element modulator, with electrical and electrooptic characteristics in good agreement with theory, was operated at RF drive power levels up to the reverse breakdown voltage limit. The insertion loss of the modulator was quite high, due to absorption losses in the epitaxial material

Keywords

III-V semiconductors; electro-optical devices; gallium arsenide; optical modulation; 10.6 micron; GaAs electrooptic modulator; III-V semiconductor; absorption losses; electrooptic properties; frequency tunability; insertion loss; laser frequency shifting applications; lumped-element modulator; output signals; reverse breakdown voltage limit; single-mode channel waveguides; thick epitaxial GaAs-AlGaAs waveguide structures; Electrooptic modulators; Electrooptical waveguides; Frequency; Gallium arsenide; Laser applications; Laser theory; Lasers and electrooptics; Optical losses; Optical waveguide theory; Optical waveguides;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.135276

Filename

135276