Title :
Theoretical and measured characteristics of metal (CoSi2)-insulator(CaF2) resonant tunneling transistors and the influence of parasitic elements
Author :
Suemasu, Takashi ; Kohno, Yoshifumi ; Saitoh, Wataru ; Watanabe, Masahiro ; Asada, Masahiro
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan
fDate :
12/1/1995 12:00:00 AM
Abstract :
We report on the theoretical and measured characteristics of triple-barrier metal (CoSi2)-insulator(CaF2) (M-I) resonant tunneling transistors (RTT) grown on an n-Si(111) substrate, and the influence of their parasitic elements on the measured characteristics. First, we analyze theoretical characteristics of an M-I RTT, and then show fabrication process and current-voltage (I-V) characteristics obtained at 77 K, in which several degradations are observed: large resonance voltage, low peak-to-valley (P-V) ratios at negative differential resistance (NDR), and reverse base current. Analysis, taking several parasitic elements (e.g., base resistance, substrate resistance and leakage currents connected to the intrinsic transistor) into account, explains observed characteristics well. Finally, we show the first transistor action with large P-V ratios at 300 K, which is achieved by reducing collector-emitter leakage currents
Keywords :
calcium compounds; characteristics measurement; cobalt compounds; elemental semiconductors; leakage currents; negative resistance devices; quantum interference devices; resonant tunnelling transistors; semiconductor device models; silicon; 300 K; 77 K; CoSi2-CaF2-Si; P-V ratios; base resistance; collector-emitter leakage currents; current-voltage characteristics; fabrication process; metal-insulator resonant tunneling transistors; negative differential resistance; observed characteristics; parasitic elements; peak-to-valley ratios; resonance voltage; reverse base current; substrate resistance; triple-barrier metal; Degradation; Dielectrics and electrical insulation; Electrical resistance measurement; Electrons; Fabrication; Fluctuations; Leakage current; Low voltage; Metal-insulator structures; Resonance; Resonant tunneling devices; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
