Title :
A self-aligned trenched cathode lateral insulated gate bipolar transistor with high latch-up resistance
Author :
Mok, Philip K T ; Nezar, Azzouz ; Salama, C. André T
Author_Institution :
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
fDate :
12/1/1995 12:00:00 AM
Abstract :
This paper discusses a modified insulated gate bipolar transistor (LIGBT) structure using a self-aligned trenched contact at the cathode of the device which significantly reduces the parasitic p-base resistance underneath the n+ cathode region to suppress the latch-up. The trenched cathode LIGBT (TC-LIGBT) structure is BiCMOS compatible and the LIGBTs with latching current densities over 1200 A/cm 2 have been obtained using a 4 μm technology
Keywords :
BiCMOS integrated circuits; carrier density; insulated gate bipolar transistors; power bipolar transistors; semiconductor device reliability; 4 micron; TC-LIGBT; latch-up resistance; latching current densities; lateral insulated gate bipolar transistor; n+ cathode region; parasitic p-base resistance; self-aligned trenched contact; trenched cathode; BiCMOS integrated circuits; CMOS technology; Cathodes; Contact resistance; Current density; Insulated gate bipolar transistors; Insulation; Integrated circuit technology; Thyristors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
