Fast and accurate extraction of parasitic resistances for nonlinear GaAs MESFET device models

Author

Debie, P. ; Martens, L.

Author_Institution

Dept. of Inf. Technol., Gent Univ., Belgium

Volume

42

Issue

12

fYear

1995

fDate

12/1/1995 12:00:00 AM

Firstpage

2239

Lastpage

2242

Abstract

A new and accurate technique for extracting the parasitic resistance values from GaAs MESFET´s for nonlinear circuit models is presented. The technique makes use of only two simple dc measurements. Using this extraction method, good agreement between simulated and measured data for the nonlinear Statz MESFET model is obtained, so it is very appropriate for large-signal device and circuit modeling purposes. The presented extraction method is implemented in HP-ICCAP, a software tool for parameter extraction. In addition, all the measurements are controlled by this software, so a high level of automation is obtained

Keywords

III-V semiconductors; Schottky gate field effect transistors; circuit analysis computing; digital simulation; gallium arsenide; microwave field effect transistors; semiconductor device models; GaAs; HP-ICCAP; MESFET device models; dc measurements; large-signal device; nonlinear Statz MESFET model; nonlinear circuit models; parameter extraction; parasitic resistances; Automatic control; Circuit simulation; Data mining; Electrical resistance measurement; Gallium arsenide; MESFET circuits; Nonlinear circuits; Parameter extraction; Software measurement; Software tools;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.477787

Filename

477787