DocumentCode
1151849
Title
Threshold voltage and inversion charge modeling of graded SiGe-channel modulation-doped p-MOSFETs
Author
Niu, G.F. ; Ruan, G.
Author_Institution
Dept. of Electron. Eng., Fudan Univ., Shanghai, China
Volume
42
Issue
12
fYear
1995
fDate
12/1/1995 12:00:00 AM
Firstpage
2242
Lastpage
2246
Abstract
Analytical models of threshold voltage and inversion charge for the graded SiGe-channel modulation-doped p-MOSFETs have been derived and verified by SEDAN-3 simulation. The effect of threshold voltage adjustment on hole confinement, and the increase of SiGe channel hole density under the threshold voltage specified by application circuits are then studied
Keywords
Ge-Si alloys; MOSFET; digital simulation; high electron mobility transistors; hole density; semiconductor device models; semiconductor materials; SEDAN-3 simulation; SiGe; application circuits; channel hole density; graded channel; hole confinement; inversion charge modeling; modulation-doped p-MOSFETs; threshold voltage; Analytical models; Boron; Circuit simulation; Doping; Epitaxial layers; Gaussian channels; Germanium silicon alloys; MOSFET circuits; Poisson equations; Silicon germanium; Threshold voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.477788
Filename
477788
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