Title :
Threshold voltage and inversion charge modeling of graded SiGe-channel modulation-doped p-MOSFETs
Author :
Niu, G.F. ; Ruan, G.
Author_Institution :
Dept. of Electron. Eng., Fudan Univ., Shanghai, China
fDate :
12/1/1995 12:00:00 AM
Abstract :
Analytical models of threshold voltage and inversion charge for the graded SiGe-channel modulation-doped p-MOSFETs have been derived and verified by SEDAN-3 simulation. The effect of threshold voltage adjustment on hole confinement, and the increase of SiGe channel hole density under the threshold voltage specified by application circuits are then studied
Keywords :
Ge-Si alloys; MOSFET; digital simulation; high electron mobility transistors; hole density; semiconductor device models; semiconductor materials; SEDAN-3 simulation; SiGe; application circuits; channel hole density; graded channel; hole confinement; inversion charge modeling; modulation-doped p-MOSFETs; threshold voltage; Analytical models; Boron; Circuit simulation; Doping; Epitaxial layers; Gaussian channels; Germanium silicon alloys; MOSFET circuits; Poisson equations; Silicon germanium; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
