A novel silicon carbide based high-bidirectional switching device for high-voltage control applications

Author

Hwang, J.D. ; Fang, Y.K. ; Chan, Karen H. ; Chiu, H.Y.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

42

Issue

12

fYear

1995

fDate

12/1/1995 12:00:00 AM

Firstpage

2246

Lastpage

2248

Abstract

A new structure of metal/i-SiC/c-Si(n⁺-P) (MISS) bidirectional switching device is successfully developed for the first time. A thick sputtered SiC layer is used, instead of the thin insulating layer in the conventional MISS structure. Due to the wide band gap of the silicon carbide (2.3 eV for β-SiC), this bidirectional switching device possesses a high switching voltage, e.g. 134 V for the 3000 Å silicon carbide thickness. The corresponding switching currents and holding current are 0.16 mA and 1.1 mA, respectively. Experimental results show the switching voltage V_s increases with increasing intrinsic silicon carbide thickness. This study indicates that the silicon carbide bidirectional switching device is a promising element for high-voltage switching applications

Keywords

MIS devices; elemental semiconductors; negative resistance devices; semiconductor materials; semiconductor switches; silicon; silicon compounds; 0.16 mA; 1.1 mA; 134 V; MIS structures; SiC-Si; high-bidirectional switching device; high-voltage switching applications; holding current; negative resistance; switching currents; switching voltage; wide band gap; Anodes; Argon; Cathodes; Etching; Fabrication; Insulation; Silicon carbide; Sputtering; Substrates; Voltage; Wideband;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.477789

Filename

477789