Effects of interface and bulk recombination on switching characteristics of AlGaAs/GaAs pnpn bistable device

Author

Fardi, Hamid Z.

Author_Institution

Dept. of Electr. Eng., Colorado Univ., Denver, CO, USA

Volume

42

Issue

12

fYear

1995

fDate

12/1/1995 12:00:00 AM

Firstpage

2248

Lastpage

2250

Abstract

Device modeling is used to analyze the steady-state current voltage characteristics of double heterostructure AlGaAs/GaAs pnpn switches in the presence of interface and bulk recombination mechanisms. Simulation results show that the holding current increases significantly by shortening the carrier lifetime at heterojunction interface, while the holding voltage and breakover point remain relatively constant. Results also indicate that shortening the carrier lifetime in the inner pn homojunction region only increases the off-state leakage current. These results are in agreement with experimental data obtained by others, and may be used to design a device with optimum switching performance

Keywords

III-V semiconductors; aluminium compounds; carrier lifetime; electron-hole recombination; gallium arsenide; leakage currents; photoconducting switches; AlGaAs-GaAs; breakover point; bulk recombination; carrier lifetime; double heterostructure pnpn switches; heterojunction interface; holding current; holding voltage; inner pn homojunction region; off-state leakage current; pnpn bistable device; recombination mechanisms; steady-state current voltage characteristics; switching characteristics; Charge carrier lifetime; Current-voltage characteristics; Electrons; Gallium arsenide; Heterojunctions; Leakage current; Optical bistability; Optical devices; Optical films; Optical sensors; Radiative recombination; Silicon carbide; Solid state circuits; Steady-state; Switches; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.477790

Filename

477790