Title :
16 W continuous-wave output power from 100 μm-aperture laser with quantum well asymmetric heterostructure
Author :
Pikhtin, N.A. ; Slipchenko, S.O. ; Sokolova, Z.N. ; Stankevich, A.L. ; Vinokurov, D.A. ; Tarasov, I.S. ; Alferov, Zh.I.
Author_Institution :
A.F. Ioffe Physico-Tech. Inst., Russian Acad. of Sci., St. Petersburg, Russia
Abstract :
16 W continuous-wave room temperature front facet output optical power and 74% wallplug efficiency were attained in 100 μm-aperture 1.06 μm-emitting laser diodes with 2-3 mm cavity length. The lasers are based on AlGaAs/GaAs/InGaAs quantum well asymmetric heterostructures with 1.7 μm-thick waveguide having 0.34 cm-1 internal optical loss.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical losses; optical waveguides; quantum well lasers; semiconductor quantum wells; 1.06 micron; 1.7 micron; 100 micron; 2 to 3 mm; AlGaAs-GaAs-InGaAs; aperture laser; continuous-wave output power; front facet output optical power; internal optical loss; laser diodes; quantum well asymmetric heterostructure; room temperature; wallplug efficiency; waveguides;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20045885
