Title :
Comment on "Modeling of electron-hole scattering in semiconductor devices"
Author :
Mnatsakanov, T.T.
Author_Institution :
All-Russian Electr. Eng. Inst., Moscow, Russia
Abstract :
For original paper see D.E. Kane and R.M. Swanson, ibid., vol.40, no.8, pp.1496-1500 (1993). A review of results on electron-hole scattering in semiconductors and semiconductor devices is presented. It is shown that the main relations governing charge carrier transport in the presence of strong electron-hole scattering have been established over the last 15 years.
Keywords :
semiconductor device models; charge carrier transport; electron-hole scattering; modeling; semiconductor devices; semiconductors; Boltzmann equation; Charge carrier processes; Charge carriers; Electron devices; Electron mobility; Nonhomogeneous media; Scattering; Semiconductor devices;
Journal_Title :
Electron Devices, IEEE Transactions on
