A low-noise microwave oscillator employing a self-aligned AlGaAs/GaAs HBT

A study is made of the application of heterojunction bipolar transistors (HBTs) to low-noise microwave circuits. Design considerations and the low-noise performance of a Ku-band free-running oscillator using a self-aligned AlGaAs/GaAs HBT are described. The device has a novel structure in which, by utilizing SiO ₂ sidewalls, the base surface area, which is the main cause of low-frequency noise, is drastically reduced. For a collector current of 1 mA, the fabricated device has base current noise power densities of 4×10^-20, 6×10^-21, and 2.5×10^-21 A²/Hz at baseband frequencies of 1, 10, and 100 kHz, respectively. A prototype oscillator operating at 15.5 GHz has a measured output power of 6 dBm and SSB FM noise power densities of -34 dBc/Hz at 1 kHz, -65 dBc/Hz at 10 kHz, and -96 dBc/Hz at 100 kHz off-carrier, without using high-Q elements such as a dielectric resonator. The results of this study demonstrate the suitability of HBTs for low-phase-noise microwave and millimeter-wave oscillator applications