DocumentCode :
1152030
Title :
An analytical model for 1/f noise in polycrystalline silicon thin films
Author :
Luo, Min-Yih ; Bosman, Gijs
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
Volume :
37
Issue :
3
fYear :
1990
fDate :
3/1/1990 12:00:00 AM
Firstpage :
768
Lastpage :
774
Abstract :
Noise calculations based on Hooge´s empirical mobility fluctuation model are presented for mobility fluctuations occurring in the quasi-neutral and the depletion-barrier regions of low to moderately doped polycrystalline silicon resistors. Comparing the theoretical predictions with the experimental results, it is concluded from the bias dependence and the magnitude of the noise density that the 1/f noise in polysilicon is depletion-region dominant. The limiting role of grain boundaries, the noise correlation between depletion regions on both sides of a grain boundary, and a noise source weight function are taken into account. The Hooge parameter found from the model and data is 1.45×10-3
Keywords :
Schottky-barrier diodes; carrier mobility; electron device noise; elemental semiconductors; grain boundaries; random noise; semiconductor device models; semiconductor thin films; silicon; 1/f noise; Hooge parameter; Hooge´s empirical mobility fluctuation model; Schottky barrier diodes; analytical model; bias dependence; depletion-barrier regions; grain boundaries; noise density; noise source weight function; polycrystalline Si thin films; semiconductor; Acoustical engineering; Analytical models; Circuit noise; Fluctuations; Grain boundaries; Low-frequency noise; Schottky barriers; Schottky diodes; Semiconductor thin films; Silicon;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.47784
Filename :
47784
Link To Document :
بازگشت