Title :
InGaAsP/InAlAs superlattice avalanche photodiode
Author :
Kagawa, Toshiaki ; Kawamura, Yuichi ; Iwamura, Hidetoshi
Author_Institution :
NTT Opto-Electron. Lab., Kanagawa, Japan
fDate :
6/1/1992 12:00:00 AM
Abstract :
The fabrication of an InGaAsP-InAlAs superlattice avalanche photodiode using a gas source molecular beam epitaxy is discussed. A quaternal alloy of InGaAsP was used for the well layers in order to suppress the dark current due to the tunneling effect. With this structure, the valance band discontinuity almost vanishes and a gain bandwidth of 110 GHz was obtained
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; semiconductor growth; 110 GHz; InGaAsP-InAlAs; MBE semiconductor growth; dark current suppression; gain bandwidth; gas source molecular beam epitaxy; quaternal alloy; superlattice avalanche photodiode; tunneling effect; valance band discontinuity; well layers; Avalanche photodiodes; Dark current; Fabrication; Heterojunctions; Indium compounds; Indium gallium arsenide; Ionization; Optical receivers; Photonic band gap; Superlattices;
Journal_Title :
Quantum Electronics, IEEE Journal of
