The gain and carrier density in semiconductor lasers under steady-state and transient conditions

Author

Zhao, Bin ; Chen, T.R. ; Yariv, Amnon

Author_Institution

Thomas J. Watson Sr. Lab. of Appl. Phys., California Inst. of Technol., Pasadena, CA, USA

Volume

28

Issue

6

fYear

1992

fDate

6/1/1992 12:00:00 AM

Firstpage

1479

Lastpage

1486

Abstract

The carrier distribution functions in a semiconductor crystal in the presence of a strong optical field are obtained. These are used to derive expressions for the gain dependence on the carrier density and on the optical intensity-the gain suppression effect. A general expression for high-order nonlinear gain coefficients is obtained. This formalism is used to describe the carrier and power dynamics in semiconductor lasers above and below threshold in the static and transient regimes

Keywords

carrier density; laser theory; nonlinear optics; semiconductor junction lasers; above threshold; below threshold; carrier density; carrier distribution functions; gain dependence; gain suppression effect; high-order nonlinear gain coefficients; optical intensity; power dynamics; semiconductor lasers; steady-state; strong optical field; transient conditions; Charge carrier density; Distribution functions; Electron optics; Laser theory; Nonlinear equations; Nonlinear optics; Optical saturation; Optical scattering; Semiconductor lasers; Steady-state;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.135300

Filename

135300