Title :
The gain and carrier density in semiconductor lasers under steady-state and transient conditions
Author :
Zhao, Bin ; Chen, T.R. ; Yariv, Amnon
Author_Institution :
Thomas J. Watson Sr. Lab. of Appl. Phys., California Inst. of Technol., Pasadena, CA, USA
fDate :
6/1/1992 12:00:00 AM
Abstract :
The carrier distribution functions in a semiconductor crystal in the presence of a strong optical field are obtained. These are used to derive expressions for the gain dependence on the carrier density and on the optical intensity-the gain suppression effect. A general expression for high-order nonlinear gain coefficients is obtained. This formalism is used to describe the carrier and power dynamics in semiconductor lasers above and below threshold in the static and transient regimes
Keywords :
carrier density; laser theory; nonlinear optics; semiconductor junction lasers; above threshold; below threshold; carrier density; carrier distribution functions; gain dependence; gain suppression effect; high-order nonlinear gain coefficients; optical intensity; power dynamics; semiconductor lasers; steady-state; strong optical field; transient conditions; Charge carrier density; Distribution functions; Electron optics; Laser theory; Nonlinear equations; Nonlinear optics; Optical saturation; Optical scattering; Semiconductor lasers; Steady-state;
Journal_Title :
Quantum Electronics, IEEE Journal of
