DocumentCode :
1152311
Title :
Two-dimensional analysis of astigmatism in self-aligned structure semiconductor lasers
Author :
Ueno, Masayasu
Author_Institution :
NEC Corp., Kawasaki, Japan
Volume :
28
Issue :
6
fYear :
1992
fDate :
6/1/1992 12:00:00 AM
Firstpage :
1487
Lastpage :
1495
Abstract :
0.78-μm AlGaAs-GaAs self-aligned structure (SAS) lasers have been theoretically studied with regard to the relationships between astigmatism and structural parameters. This was done on the basis of a two-dimensional analysis of astigmatism. Analytical results are compared in detail with experimental results regarding astigmatism in MOVPE-grown SAS lasers. Analytical results are shown to agree quite well with experimental results. and that the two-dimensional simulator is very effective in calculating astigmatism accurately. Moreover, analytical results reveal that rectangular-shaped mesa SAS lasers with a slope around the mesa bottom have very small astigmatism when current injection width and the slope gradient around the mesa bottom are relatively small, and that they achieve high power operations
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser theory; semiconductor junction lasers; 0.78 micron; 2D analysis; AlGaAs-GaAs; IR; MOVPE-grown; astigmatism; current injection width; high power operations; mesa bottom; rectangular-shaped mesa SAS lasers; self-aligned structure semiconductor lasers; slope gradient; Analytical models; Epitaxial growth; Epitaxial layers; Laser modes; Laser stability; Laser theory; Power lasers; Semiconductor lasers; Synthetic aperture sonar; Vision defects;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.135301
Filename :
135301
Link To Document :
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