Two-dimensional analysis of astigmatism in self-aligned structure semiconductor lasers

Author

Ueno, Masayasu

Author_Institution

NEC Corp., Kawasaki, Japan

Volume

28

Issue

6

fYear

1992

fDate

6/1/1992 12:00:00 AM

Firstpage

1487

Lastpage

1495

Abstract

0.78-μm AlGaAs-GaAs self-aligned structure (SAS) lasers have been theoretically studied with regard to the relationships between astigmatism and structural parameters. This was done on the basis of a two-dimensional analysis of astigmatism. Analytical results are compared in detail with experimental results regarding astigmatism in MOVPE-grown SAS lasers. Analytical results are shown to agree quite well with experimental results. and that the two-dimensional simulator is very effective in calculating astigmatism accurately. Moreover, analytical results reveal that rectangular-shaped mesa SAS lasers with a slope around the mesa bottom have very small astigmatism when current injection width and the slope gradient around the mesa bottom are relatively small, and that they achieve high power operations

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; laser theory; semiconductor junction lasers; 0.78 micron; 2D analysis; AlGaAs-GaAs; IR; MOVPE-grown; astigmatism; current injection width; high power operations; mesa bottom; rectangular-shaped mesa SAS lasers; self-aligned structure semiconductor lasers; slope gradient; Analytical models; Epitaxial growth; Epitaxial layers; Laser modes; Laser stability; Laser theory; Power lasers; Semiconductor lasers; Synthetic aperture sonar; Vision defects;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.135301

Filename

135301