Title :
Electroabsorption enhancement in tensile strained quantum wells via absorption edge merging
Author :
Gomatam, Badri N. ; Anderson, Neal G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA
fDate :
6/1/1992 12:00:00 AM
Abstract :
Electroabsorption in quantum wells under biaxial tension is investigated theoretically. It is found that enhanced electroabsorption due to a field-induced merging of the light and heavy hole absorption edges can be achieved in these structures at moderate operating fields. Calculations showing this merging and electroabsorption enhancement for InxGa1-xAs-InP and GaAsxP1-x-Al0.35Ga0.65As quantum well structures are described. Trade-offs involving the advantages of merged absorption edges are identified through comparisons of tensile strained modulators utilizing the merging effect of analogous lattice matched structures. Optimal structures for operation at 1.55 μm in InxGa1-xAs-InP and 0.77 μm in GaAsxP1-x-Al0.35Ga0.65As are identified, and the sensitivities of their electroabsorption characteristics to material and structural parameters are examined
Keywords :
III-V semiconductors; electro-optical devices; electroabsorption; gallium arsenide; gallium compounds; indium compounds; optical modulation; 0.77 micron; 1.55 micron; GaAsP-AlGaAs; IR; InGaAs-InP; absorption edge merging; biaxial tension; electroabsorption enhancement; enhanced electroabsorption; field-induced merging; heavy hole absorption edges; lattice matched structures; light holes; merged absorption edges; optical modulators; semiconductors; sensitivities; tensile strained modulators; tensile strained quantum wells; Absorption; Indium phosphide; Lattices; Lighting control; Merging; Optical modulation; Optical waveguides; Quantum mechanics; Quantum well devices; Voltage control;
Journal_Title :
Quantum Electronics, IEEE Journal of
