DocumentCode
1152406
Title
Optimization of RESURF LDMOS transistors: an analytical approach
Author
Parpia, Zahir ; Salama, C. Andre T
Author_Institution
Dept. of Electr. Eng., Toronto Univ., Ont., Canada
Volume
37
Issue
3
fYear
1990
fDate
3/1/1990 12:00:00 AM
Firstpage
789
Lastpage
796
Abstract
The high-voltage behavior of the lateral double-diffused MOS transistor (LDMOST) is investigated using an analytical approach. Expressions for the breakdown voltage of an LDMOST fabricated on both thick and thin epitaxial layers are derived. On the basis of this information, a strategy for the optimization of RESURF LDMOSTs is developed. The accuracy of the analytical expressions is verified by comparison with two-dimensional simulation results
Keywords
electric breakdown of solids; insulated gate field effect transistors; optimisation; power transistors; semiconductor device models; RESURF LDMOS optimisation; analytical approach; breakdown voltage; high-voltage behavior; lateral double-diffused MOS transistor; thick epitaxial layers; thin epitaxial layers; two-dimensional simulation; Analytical models; Application specific integrated circuits; Avalanche breakdown; Breakdown voltage; Circuit simulation; Conductivity; Doping; Epitaxial layers; MOSFETs; Substrates;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.47787
Filename
47787
Link To Document