DocumentCode :
1152450
Title :
Detection of optical and infrared radiation with DC-biased electron-tunneling metal-barrier-metal diodes
Author :
Faris, Sophia ; Gustafson, T. ; Wiesner, J.
Author_Institution :
University of California, Berkeley, CA, USA
Volume :
9
Issue :
7
fYear :
1973
fDate :
7/1/1973 12:00:00 AM
Firstpage :
737
Lastpage :
745
Abstract :
The voltage obtained from metal-barrier-metal (MBM) diodes by phase-sensitive detection when illuminated with optical and near-infrared radiation, modulated at 880 Hz, has been studied as a function of an applied dc bias. The detected voltage is a nonlinear function of the bias voltage for high junction impedances, and linear for low junction impedances. The nonlinearity in the junction has been shown to be consistent with electron tunneling theory.
Keywords :
Diodes; Impedance; Infrared detectors; Nonlinear optics; Optical detectors; Optical modulation; Phase detection; Phase modulation; Radiation detectors; Voltage;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1973.1077721
Filename :
1077721
Link To Document :
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