Si-induced enhancement of ohmic performance of Ti/Al/Mo/Au metallisation for AlGaN/GaN HEMTs

Author

Mohammed, F.M. ; Wang, L. ; Koo, H.J. ; Adesida, I.

Author_Institution

Dept. of Mater. Sci. & Eng., Univ. of Illinois, Urbana-Champaign, IL, USA

Volume

41

Issue

17

fYear

2005

Firstpage

984

Lastpage

985

Abstract

Incorporation of Si is shown to induce an improvement in the ohmic performance of Ti/Al/Mo/Au metallisation on MOCVD-grown AlGaN/GaN heterostructures. Optimised contact resistance (R_c) and specific contact resistivity (ρ_c) of Ti/Si/Al/Si/Mo/Au metallisation are 0.16 Ω · mm and 6.77×10^-7 Ω · cm² in comparison to 0.41 Ω · mm and 4.78×10^-6 Ω · cm² obtained for Ti/Al/Mo/Au metallisation. Auger electron spectroscopy analysis indicates that Si containing inter-metallics formation is responsible for enhancement of ohmic performance.

Keywords

Auger electron spectra; III-V semiconductors; MOCVD coatings; aluminium alloys; aluminium compounds; contact resistance; electrical resistivity; gallium compounds; gold alloys; high electron mobility transistors; molybdenum alloys; ohmic contacts; semiconductor device metallisation; silicon alloys; titanium alloys; wide band gap semiconductors; AlGaN-GaN; Auger electron spectroscopy analysis; HEMT; MOCVD-grown heterostructures; Si-induced enhancement; Ti/Al/Mo/Au metallisation; TiSiAlMoAu; contact resistance; high electron mobility transistor; intermetallics formation; ohmic contacts; specific contact resistivity;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20051849

Filename

1500299