Title :
Physical DMOST modeling for high-voltage IC CAD
Author :
Kim, Yeong-Seuk ; Fossum, Jerry G.
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
fDate :
3/1/1990 12:00:00 AM
Abstract :
A physical, seminumerical charge-based model for vertical DMOSTs is developed and implemented in SPICE. The model is derived from regional quasi-static analyses of carrier transport which implicitly characterize the device currents and charges and which require numerical solution. Newton-Raphson iterative device solutions are derived within the circuit nodal analysis framework of SPICE. PISCES simulations and measurements of test devices support the model, which is demonstrated in DC and transient SPICE simulations of VDMOSTs and high-voltage integrated circuits (HVICs)
Keywords :
circuit CAD; insulated gate field effect transistors; iterative methods; numerical methods; power integrated circuits; semiconductor device models; HVIC; Newton-Raphson iterative device solutions; PISCES simulations; VDMOST; carrier transport; circuit nodal analysis; double-diffused MOS transistor; high-voltage IC CAD; high-voltage integrated circuits; numerical solution; physical DMOST modelling; regional quasi-static analyses; seminumerical charge-based model; transient SPICE simulations; vertical DMOST; Circuit analysis; Circuit simulation; Computational modeling; Design automation; Integrated circuit measurements; Integrated circuit modeling; Nonlinear equations; SPICE; Semiconductor process modeling; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
