Title :
Ion-implanted p-n junction capacitors for GaAs DRAMs
Author :
Pabst, J.W. ; Dungan, T.E. ; Cooper, J.A., Jr. ; Melloch, M.R.
Author_Institution :
Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
fDate :
3/1/1990 12:00:00 AM
Abstract :
The generation-limited storage time of ion-implanted GaAs p-n junction capacitors is reported. Deep n-type potential wells were formed in a lightly p-doped epitaxial layer with 150-keV Si++ doses of 5×1013 cm-2 and 1×1014 cm-2. Mg+ doses of 5×1014 cm-2 were implanted through a thin SiON cap at 40 and 60 keV to form shallow p+-regions within the n-wells. Storage times obtained from capacitance transient measurements of the p-n-p structures indicate the possibility of planar ion-implanted GaAs dynamic memory cells at room temperature
Keywords :
III-V semiconductors; capacitors; field effect integrated circuits; gallium arsenide; integrated memory circuits; ion implantation; random-access storage; 40 to 150 keV; GaAs:Si,Mg; III-V semiconductors; SiON cap; capacitance transient measurements; deep n-type potential wells; dynamic memory cells; generation-limited storage time; ion implanted DRAM cells; ion implanted capacitor; lightly p-doped epitaxial layer; p-n junction capacitors; p-n-p structures; room temperature; shallow p+-regions; Capacitance; Capacitors; Circuit testing; Gallium arsenide; Implants; MESFETs; Molecular beam epitaxial growth; P-n junctions; Random access memory; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
