DocumentCode :
1152617
Title :
Enhanced optical polarization anisotropy in quantum wells under anisotropic tensile strain
Author :
Biermann, Mark L. ; Diaz-Barriga, James ; Rabinovich, William S.
Author_Institution :
Phys. Dept., U.S. Naval Acad., Annapolis, MD, USA
Volume :
39
Issue :
3
fYear :
2003
fDate :
3/1/2003 12:00:00 AM
Firstpage :
401
Lastpage :
403
Abstract :
Anisotropic in-plane strain in quantum wells leads to an optical polarization anisotropy that can be exploited in optoelectronic devices such as modulators. A theoretical model shows that the behavior of the polarization anisotropy with increasing strain anisotropy is radically different for quantum wells under anisotropic tensile and compressive strains of equal magnitude. This strikingly different behavior arises from the different valence-subband mixing that occurs in the cases of anisotropic tensile and compressive strain. Specifically, the mixing of the first heavy- and light-hole subbands that occurs only under anisotropic tensile strain is central to the polarization anisotropy.
Keywords :
light polarisation; optical modulation; piezo-optical effects; semiconductor quantum wells; valence bands; Ga0.56In0.44As-Al0.48In0.52As; anisotropic compressive strains; anisotropic in-plane strain; anisotropic tensile strain; enhanced optical polarization anisotropy; heavy-hole subbands; light-hole subbands; modulators; optoelectronic devices; quantum wells; strain anisotropy; superlattice; valence-subband mixing; Anisotropic magnetoresistance; Capacitive sensors; Geometrical optics; Optical devices; Optical mixing; Optical modulation; Optical polarization; Optoelectronic devices; Quantum mechanics; Tensile strain;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2002.808145
Filename :
1181519
Link To Document :
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