• DocumentCode
    1152623
  • Title

    Current-induced breakdown in p-type collector AlGaAs/GaAs HBTs

  • Author

    Gao, G.B. ; Huang, Dijiang ; Chyi, Jen-Inn ; Chen, Jiann-Jong ; Morkoc, H.

  • Author_Institution
    Mater. Res. Lab., Illinois Univ., Urbana, IL
  • Volume
    37
  • Issue
    3
  • fYear
    1990
  • fDate
    3/1/1990 12:00:00 AM
  • Firstpage
    807
  • Lastpage
    810
  • Abstract
    The current-induced breakdown phenomenon, which can occur in p-type collector heterojunction bipolar transistors (HBTs), is described. It is shown that the breakdown voltage across the p-type collector junction of HBTs decreases rapidly with increasing current density. The effects of collector structure, doping concentration, and layer thickness are analyzed
  • Keywords
    III-V semiconductors; aluminium compounds; electric breakdown of solids; gallium arsenide; heterojunction bipolar transistors; AlGaAs-GaAs; III-V semiconductors; breakdown voltage; collector structure; current density; current-induced breakdown phenomenon; doping concentration; heterojunction bipolar transistors; layer thickness; p-type collector; Annealing; Argon; Electric breakdown; Gallium arsenide; Heterojunction bipolar transistors; Implants; Laboratories; Oxidation; Rapid thermal processing; Testing;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.47791
  • Filename
    47791
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1152623